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| EW MOC8111 PHOTOTRANSISTOR NO BASE CONNECTION OPTOCOUPLER Package Dimensions in inches (mm) Pin One ID. 3 .248 (6.30) .256 (6.50) 4 5 6 2 1 Anode 1 Cathode 2 NC 3 6 Base 5 Collector 4 Emitter FEATURES * Current Transfer Ratio 20% Min. * No Base Terminal Connection for Improved Common Mode Interface Immunity * Field-Effect Stable by TRIOS (TRansparent IOn Shield) * Long Term Stability * Industry Standard Dual-in-Line Package * Underwriters Lab File #E52744 V * VDE 0884 Available with Option 1 DE N .335 (8.50) .343 (8.70) .039 (1.00) min. 4 typ. .018 (0.45) .022 (0.55) .300 (7.62) typ. .130 (3.30) .150 (3.81) 18 typ. .020 (.051) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. .010 (.25) .014 (.35) .300 (7.62) .347 (8.82) .110 (2.79) .150 (3.81) DESCRIPTION The MOC8111 is an optocoupler consisting of a Gallium Arsenide infrared emitting diode optically coupled to a silicon planar phototransistor detector in a plastic plug-in DIP 6 pin package. The coupling device is suitable for signal transmission between two electrically separated circuits. The potential difference between the circuits to be coupled is not allowed to exceed the maximum permissible reference voltages. In contrast to the IL1 the base terminal is not connected, resulting in a substantially improved common-mode interference immunity. Maximum Ratings (TA=25C) Emitter Reverse Voltage .............................................. 6 V DC Forward Current ................................... 60 mA Surge Forward Current (t10 s) .................. 2.5 A Total Power Dissipation............................ 100 mW Detector Collector-Emitter Breakdown Voltage ............ 30 V Collector Current ....................................... 50 mA Collector Current (t1 ms) ........................ 150 mA Total Power Dissipation............................ 150 mW Package Isolation Test Voltage between Emitter and Detector, Refer to Standard Climate 23/50 DIN 50014 ....................................5300 VACRMS Creepage ...................................................7 mm Clearance ...................................................7 mm Isolation Thickness between Emitter and Detector ............................0.4 mm Comparative Tracking Index per DIN IEC 112/VDE 0303, part 1 ..............175 Isolation Resistance VIO=500 V, TA=25C.................................1012 VIO=500 V, TA=100C...............................1011 Storage Temperature Range ..... -55C to +150C Ambient Temperature Range..... -55C to +100C Soldering Temperature (max. 10 s, dip soldering distance to seating plane 1.5 mm) ...........................260C Electrical Characteristics (TA=25C) Parameter Emitter Forward Voltage Reverse Leakage Current Capacitance Detector Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Emitter-Collector Breakdown Voltage Collector-Emitter Capacitance Package Collector Saturation Voltage Output Collector Current Turn On Time Turn Off Time VCESAT IC 2 0.15 5 7.5 5.7 20 20 0.4 V mA s s IC=500 A IF=10 mA IF=10 mA VCE=10 V VCC=10 V RL=100 , IC=2 mA, see Figure 1 BVCEO ICEO VECO 7 30 1 50 V nA V IC=1 A VCE=10 V IE=10 A VF IR CJ 1.15 0.05 25 1.5 10 V A pF IF=10 mA VR=6 V V=0, f=1 MHz Symbol Min. Typ. Max. Unit Condition CCE 7 pF VCE=0 V, f=1 MHz TON TOFF 5-221 Figure 1. Switching times VCC=10 V IC Input Input current adjusted to achieve IC=2 mA Test Circuit RL=100 10% Output 90% tr ton Waveforms tf toff Input Pulse Output Pulse MOC8050 5-222 |
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